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The Design Features
and improved performance of the Associated
Industries Booster Amplifier is obtained by the use
of the Field Effect Transistors (FETS). Some of the
salient advantages that this technology brings to
this Amplifier are as follows:
�
Approximately 15 dB better base band noise signal
over BiPolar transistors. This means
that the radiated noise level
will be much lower in the
transmitted mode, thus
improving the co-location performance.
� Flat gain vs.
frequency is possible because of the extreme broad
band characteristic of the
Silicon FETS.
�
Lower harmonic performance is possible with FETS due
to the ability to precisely balance
this linear design in a push/pull
configuration.
� Ruggedability - The silicon field effects
transistors inherently tolerant high VSWR mismatch
because they are defused on high
resistance epitaxial material.
� Thermally protected with a high temperature (80�)
shut-off sensor switch restoring full
operation when the temperature is
decreased to normal range.
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� By-Pass operation for low power is provided with a
High/Low power switch which operates
the Transmit/Receive by-pass relays.
� Efficiency - overall power efficiency is better
than 50% due to the use of FETS thus
providing longer battery operation.
� Input voltage - At 25.6 VDC, the amplifier will
produce 50 Watts of RF Power with
approximately 2.5 Watts of RF Drive.
The amplifier will operate over a DC voltage
variation
of 22 to 28 volts with A + 1 dB variation in RF Power Output.
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